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1.5V Drive Pch MOSFET
RZF020P01
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TUMT3).
4) Low voltage drive (1.5V).
Dimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : ZE
Applications
Switching
Packaging specifications
Inner circuit
(3)
Type
RZF020P01
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
(1)
? 1
(2)
? 2
(1) Gate
Absolute maximum ratings (Ta=25 ° C)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(2) Source
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 12
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 2
± 6
? 0.6
? 6
0.8
A
A
A
A
W
Channel temperature
Range of Storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
156
Unit
° C / W
? When mounted on a ceramic board.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.05 - Rev.A
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